50N06 N-Channel Metal Oxide Semiconductor Field Effect Transistor

CSP50N06,Field Effect Transistor 1,VDSS:60V 2,RDS(ON) ):18 mili-ohm 3,Id:50 A; Package:TO-220 4,Certification:RoHS Compliant

5,FEATURES :* RDS(ON) = 23m@VGS = 10 V* Ultra low gate charge ( typical 30 nC )* Low reverse transfer capacitance ( CRSS = typical 80 pF )* Fast switching capability* 100% avalanche energy specified* Improved dv/dt capability

6,SYMBOL :

CSU50N06 TO-251 PackageCSP50N06 TO-220 PackageCSD50N06 TO-252 Package

7,APPLICATION :Networking DC-DC Power SystemAuotmobile Convert SystemPower Supply,Auto Device etc..

8,DESCRIPTION:The CSI 50N06 is three-terminal silicon device with currentconduction capability of about 50A, fast switching speed. Lowon-state resistance, breakdown voltage rating of 60V, and maxthreshold voltages of 4 volt.It is mainly suitable electronic ballast, and low power switchingmode power appliances.

CSP50N06, N-Channel Metal Oxide Semiconductor Field Effect Transistor:

Product Name	MOSFET;Mental Oxiode Semiconductor Field Effector Transistor
Series	N-Channel Power MOSFET-600 Volts Series
Package Type	TO-220
Certificate	ISO9001:2008 Certificate;SGS Report;RoHS Compliant.
Delivery Time	Within 2-4 Weeks After Order Confirmed.
Cooperation Customers	NFA,BYD,Hyundai and Panda etc..
Performance	Specification Parameters As Follows:
Part  Number	PD	ID	V(BR)DSS	RDS(ON)	VGS	EAS	PIN-ARRAY	Package
	W	A	V	Ω	V	J
CSP5N60	100	4.5	600	2.2	±30	216	GDS	TO-220
CSP6N60	115	5.6	600	1.35	±30	385	GDS	TO-220
CSP8N60	140	8	600	1	±30	560	GDS	TO-220
CSP10N60	158	9.9	600	0.75	±30	760	GDS	TO-220
CSP12N60	180	11.5	600	0.73	±30	830	GDS	TO-220
CSP50N06	130	50	60	0.023	±25	727	GDS	TO-220
CSP75N80M	268	80	75	0.009	±25	700	GDS	TO-220
NOTE

50N06 N-Channel Metal Oxide Semiconductor Field Effect Transistor